Apart from crystal quality, problems with the interface of SiC with silicon dioxide have hampered the development of SiC-based power MOSFETs and insulated-gate bipolar transistors. “The problem is, ‘what’s taking place in China?�?China is already top in terms of raw material for silicon carbide, and they are delivering very high-quality, https://x.com/hongyuxin20/status/1817068901551010097